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嘉峪檢測網(wǎng) 2024-04-20 09:30
下面是開關(guān)電源關(guān)鍵元件的各個參數(shù)中英文對照表,希望對您幫助。
肖特基二極管
Symbol |
Parameter |
中文翻譯 |
VRRM |
Peak repetitive reverse voltage |
反向重復(fù)峰值電壓 |
VRWM |
Working peak reverse voltage |
反向工作峰值電壓 |
VR |
DC Blocking Voltage |
反向直流電壓 |
VR(RMS) |
RMS Reverse Voltage |
反向電壓有效值 |
IF(AV) |
Average Rectified Forward Current |
正向平均電流 |
IR |
Reverse Current |
反向電流 |
IFSM |
Non-Repetitive Peak Forward Surge Current |
浪涌電流 |
VF |
Forward Voltage |
正向直流電壓 |
Cj |
Typical Junction Capactiance |
結(jié)電容 |
PD |
Power Dissipation |
耗散功率 |
Tj |
Operating Junction Temperature |
工作結(jié)溫 |
Tstg |
Storage Temperature Range |
存儲溫度 |
Rth(j-a) |
Thermal Resistance from Junction to Ambient |
結(jié)到環(huán)境的熱阻 |
二極管
Symbol |
Parameter |
中文翻譯 |
VR |
Continuous reverse voltage |
反向直流電壓 |
IF |
Continuous forward current |
正向直流電流 |
VF |
Forward voltage |
正向電壓 |
IR |
Reverse current |
反向電流 |
Cd |
diode capacitance |
二極管電容 |
Rd |
diode forward resistance |
二極管正向電阻 |
Ptot |
total power dissipation |
功率總損耗 |
Tj |
Junction Temperature |
結(jié)溫 |
Tstg |
storage temperature |
存儲溫度 |
TVS管
Symbol |
Parameter |
中文翻譯 |
IPP |
Maximum reverse peak pulse current |
峰值脈沖電流 |
VC |
Clampling voltage |
鉗位電壓 |
IR |
Maximum reverse leakage current |
最大反向漏電流 |
V(BR) |
Breakdown voltage |
擊穿電壓 |
VRWM |
Working peak reverse voltage |
反向工作峰值電壓 |
VF |
Forward voltage |
正向電壓 |
IF |
Forward current |
正向電流 |
IT |
Test current |
測試電流 |
可控硅
Symbol |
Parameter |
中文翻譯 |
VDRM |
Peak repetitive off-state voltage |
斷態(tài)重復(fù)峰值電壓 |
VRRM |
Peak repetitive reverse voltage |
反向重復(fù)峰值電壓 |
IT(RMS) |
RMS On-state current |
額定通態(tài)電流 |
ITSM |
Non repetitive surge peak on-state current |
通態(tài)非重復(fù)浪涌電流 |
IGM |
Forward peak gate current |
控制極重復(fù)峰值電流 |
VTM |
peak forward on-state voltage |
通態(tài)峰值電壓 |
IGT |
Gate trigger current |
控制極觸發(fā)直流電流 |
VGT |
Gate trigger voltage |
控制極觸發(fā)電壓 |
IH |
Holding current |
維持電流 |
IDRM |
Peak repetitive off-state current |
斷態(tài)重復(fù)峰值電流 |
IRRM |
Peak repetitive reverse current |
反向重復(fù)峰值電流 |
PG(AV) |
Average gate power dissipation |
控制極平均功率 |
Tj |
operating junction temperature range |
工作結(jié)溫 |
Tstg |
storage temperature range |
存儲溫度 |
穩(wěn)壓管
Symbol |
Parameter |
中文翻譯 |
VI |
input voltage |
輸入電壓 |
Vo |
output voltage |
輸出電壓 |
ΔVo |
Load regulation |
輸出調(diào)整率 |
ΔVo |
Line regulation |
輸入調(diào)整率 |
Iq |
quiescent current |
偏置電流 |
ΔIq |
quiescent current change |
偏置電流變化量 |
VN |
Output noise voltage |
輸出噪聲電壓 |
RR |
Ripple rejection |
紋波抑制比 |
Vd |
dropout voltage |
降落電壓 |
Isc |
short circuit current |
短路輸出電流 |
Ipk |
peak current |
峰值輸出電流 |
Topr |
operating junction temperature range |
結(jié)溫 |
Tstg |
storage temperature range |
存儲溫度 |
43系列基準(zhǔn)源
Symbol |
Parameter |
中文翻譯 |
VKA |
Cathode voltage |
陰極電壓 |
IK |
Cathode current range(continous) |
陰極電流 |
Iref |
Reference input current range,continous |
基準(zhǔn)輸入電流 |
PD |
Power dissipation |
耗散功率 |
Rth(j-a) |
Thermal resistance from junction to ambient |
結(jié)到環(huán)境的熱阻 |
Topr |
operating junction temperature range |
工作結(jié)溫 |
Tstg |
storage temperature range |
存儲溫度 |
Vref |
Reference input voltage |
基準(zhǔn)輸入電壓 |
ΔVref(dev) |
Deviation of reference input voltage over full temperature range |
全溫度范圍內(nèi)基準(zhǔn)輸入電壓的偏差 |
ΔVref/ΔVKA |
Ratio of change in reference input voltage to the change in cathode voltage |
基準(zhǔn)輸入電壓變化量與陰極電壓變化量的比 |
ΔIref(dev) |
Deviation of reference input current over full temperature range |
全溫度范圍內(nèi)基準(zhǔn)輸入電流的偏差 |
Imin |
Minimum cathode current for regulation |
穩(wěn)壓時最小負(fù)極電流 |
Ioff |
off-state cathode current |
關(guān)斷狀態(tài)陰極電流 |
|ZKA| |
Dynamic impedance |
動態(tài)阻抗 |
普通晶體管
Symbol |
Parameter |
中文翻譯 |
VCBO |
Collector-Base voltage |
發(fā)射極開路,集電極-基極電壓 |
VCEO |
Collector-emitter voltage |
基極開路,集電極-發(fā)射極電壓 |
VEBO |
Emitter-base voltage |
集電極開路,發(fā)射極-基極電壓 |
IC |
Collector current |
集電極電流 |
PC |
Collector power dissipation |
集電極耗散功率 |
Tj |
Junction temperature |
結(jié)溫 |
Tstg |
storage temperature |
存儲溫度 |
V(BR)CBO |
Collector-Base breakdown voltage |
發(fā)射極開路,集電極-基極反向電壓 |
V(BR)CEO |
Collector-emitter breakdown voltage |
基極開路,集電極-發(fā)射極反向電壓 |
V(BR)EBO |
Emitter-base breakdown voltage |
集電極開路,發(fā)射極-基極反向電壓 |
ICBO |
Collector cut-off current |
發(fā)射極開路,集電極-基極截止電流 |
IEBO |
Emitter cut-off current |
集電極開路,發(fā)射極-基極截止電流 |
ICEO |
Collector cut-off current |
基極開路,集電極-發(fā)射極截止電流 |
hFE |
DC current gain |
共發(fā)射極正向電流傳輸比的靜態(tài)值 |
VCEsat |
Collector-emitter saturation voltage |
集電極-發(fā)射極飽和電壓 |
VBEsat |
Base-emitter saturation voltage |
基極-發(fā)射極飽和電壓 |
VBE |
Base-emitter voltage |
基極-發(fā)射極電壓 |
fT |
Transition frequency |
特征頻率 |
Cobo |
Collector output capacitance |
共基極輸出電容 |
Cibo |
Collector input capacitance |
共基極輸入電容 |
F |
Noise figure |
噪聲系數(shù) |
Ton |
Turn-on time |
開通時間 |
Toff |
Turn-off time |
關(guān)斷時間 |
Tr |
Rise time |
上升時間 |
Ts |
Storage time |
存儲時間 |
Tf |
Fall time |
下降時間 |
Td |
Delay time |
延遲時間 |
MOS管
Symbol |
Parameter |
中文翻譯 |
ID |
Continuous drain current |
漏極直流電流 |
VGS |
Gate-source voltage |
柵-源電壓 |
VDS |
Drain-source voltage |
漏-源電壓 |
EAS |
single pulse avalchane energy |
單脈沖雪崩擊穿能量 |
Rth(j-a) |
Thermal resistance from junction to ambient |
結(jié)到環(huán)境的熱阻 |
Rth(j-c) |
Thermal resistance from junction to case |
結(jié)到管殼的熱阻 |
V(BR)DSS |
Drain-source breakdown voltage |
漏源擊穿電壓 |
V(GS)th |
Gate threshold voltage |
柵源閾值電壓 |
IGSS |
Gate-body leakage current |
漏-源短路的柵極電流 |
IDSS |
Zero gate voltage drain current |
柵-源短路的漏極電流 |
rDS(on) |
Drain-source on-resistance |
漏源通態(tài)電阻 |
gfs |
Forward trans conductance |
跨導(dǎo) |
VSD |
Diode forward voltage |
漏源間體內(nèi)反并聯(lián)二極管正向壓降 |
Ciss |
Input capacitance |
柵-源電容 |
Coss |
Output capacitance |
漏-源電容 |
Crss |
Reverse transfer capacitance |
反向傳輸電容 |
Rg |
Gate resistance |
柵極電阻 |
td(on) |
Turn-on delay time |
開通延遲時間 |
tr |
Rise time |
上升時間 |
td(off) |
Turn-off delay time |
關(guān)斷延遲時間 |
tf |
Fall time |
下降時間 |
IDM |
Pulsed drain current |
最大脈沖漏電流 |
PD |
Power dissipation |
耗散功率 |
Tj |
operating junction temperature range |
結(jié)溫 |
Tstg |
storage temperature range |
存儲溫度 |
來源:Internet